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PD - 97250
IRGP4068DPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRGP4068D-EPbF
Features
* * * * * * * * * * Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 C 5 S short circuit SOA Square RBSOA 100% of the parts tested for 4X rated current (ILM) Positive VCE (ON) Temperature co-efficient Ultra-low VF Hyperfast Diode Tight parameter distribution Lead Free Package
C
VCES = 600V IC = 48A, TC = 100C
G E
tSC 5s, TJ(max) = 175C
n-channel
C
VCE(on) typ. = 1.65V
Benefits
* Device optimized for induction heating and soft switching applications * High Efficiency due to Low VCE(on), Low Switching Losses and Ultra-low VF * Rugged transient Performance for increased reliability * Excellent Current sharing in parallel operation * Low EMI
C
GC
E
TO-247AC IRGP4068DPBF
E GC TO-247AD IRGP4068D-EPbF
G Gate
C Collector
E Emitter
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 160C IFSM IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current Clamped Inductive Load Current
Max.
600 96 48 192 192
Units
V
c d d
A
Diode Continous Forward Current Diode Non Repetitive Peak Surge Current @ TJ = 25C Diode Peak Repetitive Forward Current Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw
8.0 175 16 20 30 330 170 -55 to +175 C 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m) W V
Thermal Resistance
Parameter
RJC (IGBT) RJC (Diode) RCS RJA Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
--- --- --- ---
Typ.
--- --- 0.24 80
Max.
0.45 2.0 --- ---
Units
C/W
1
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08/16/06
IRGP4068DPBF/IRGP4068D-EPbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)CES
V(BR)CES/TJ
Min.
600 -- -- -- -- 4.0 -- -- -- -- -- -- --
Typ.
-- 0.30 1.65 2.0 2.05 -- -21 32 1.0 450 0.96 0.81 --
Max. Units
-- -- 2.14 -- -- 6.5 -- -- 150 1000 1.05 0.86 100 nA V V S A V
Conditions
VGE = 0V, IC = 100A
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
V/C VGE = 0V, IC = 1mA (25C-175C) IC = 48A, VGE = 15V, TJ = 25C V IC = 48A, VGE = 15V, TJ = 150C IC = 48A, VGE = 15V, TJ = 175C VCE = VGE, IC = 1.4mA VCE = 50V, IC = 48A, PW = 80s VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 175C IF = 8.0A IF = 8.0A, TJ = 150C VGE = 20V
e
Ref.Fig CT6 CT6 4,5,6 8,9,10
VCE(on) VGE(th)
VGE(th)/TJ
Collector-to-Emitter Saturation Voltage Gate Threshold Voltage Threshold Voltage temp. coefficient Forward Transconductance Collector-to-Emitter Leakage Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current
8,9 10,11
mV/C VCE = VGE, IC = 1.0mA (25C - 175C)
gfe ICES VFM IGES
7
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Qg Qge Qgc Eoff td(off) tf Eoff td(off) tf Cies Coes Cres RBSOA SCSOA Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-Off Switching Loss Turn-Off delay time Fall time Turn-Off Switching Loss Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Short Circuit Safe Operating Area
Min.
-- -- -- -- -- -- -- -- -- -- -- --
Typ.
95 28 35 1275 145 35 1585 165 45 3025 245 90
Max. Units
140 42 53 1481 176 46 -- -- -- -- -- -- pF J J J J nC IC = 48A VGE = 15V VCC = 400V
Conditions
Ref.Fig 18 CT1
IC = 48A, VCC = 400V, VGE = 15V RG = 10, L = 200H,TJ = 25C
Energy losses include tail
CT4
IC = 48A, VCC = 400V, VGE = 15V RG = 10, L = 200H,TJ = 25C IC = 48A, VCC = 400V, VGE = 15V RG = 10, L = 200H,TJ = 175C
Energy losses include tail
CT4
IC = 48A, VCC = 400V, VGE = 15V RG=10, L=200H, TJ = 175C VGE = 0V VCC = 30V f = 1.0Mhz TJ = 175C, IC = 192A VCC = 480V, Vp =600V Rg = 10, VGE = +15V to 0V
WF1
17
3 CT2
FULL SQUARE 5 -- -- s
VCC = 400V, Vp =600V Rg = 10, VGE = +15V to 0V
16, CT3 WF2
Notes: VCC = 80% (VCES), VGE = 20V, L = 200H, RG = 10. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
2
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IRGP4068DPBF/IRGP4068D-EPbF
100 90 80 70 350 300 250
50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 T C (C)
Ptot (W)
60
IC (A)
200 150 100 50 0 0 25 50 75 100 125 150 175 200 T C (C)
Fig. 1 - Maximum DC Collector Current vs. Case Temperature
1000
Fig. 2 - Power Dissipation vs. Case Temperature
200 180 160 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
100
140
ICE (A)
10 1 10 100 VCE (V) 1000
120 100 80 60 40 20 0 0 2 4 6
IC (A)
8
10
Fig. 3 - Reverse Bias SOA TJ = 175C; VGE =15V
200 180 160 140
ICE (A)
Fig. 4 - Typ. IGBT Output Characteristics TJ = -40C; tp = 80s
200 180 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
VCE (V)
100 80 60 40 20 0 0 2 4 6
ICE (A)
120
VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V
160 140 120 100 80 60 40 20 0
8
10
0
2
4
6
8
10
VCE (V)
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics TJ = 25C; tp = 80s
Fig. 6 - Typ. IGBT Output Characteristics TJ = 175C; tp = 80s
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3
IRGP4068DPBF/IRGP4068D-EPbF
20 18 16 14
VCE (V)
12 10 8 6 4 2 0 5 10 VGE (V)
ICE = 24A ICE = 48A ICE = 96A
15
20
Fig. 7 - Typ. Diode Forward Voltage Drop Characteristics
20 18 16 14 20 18 16 14
Fig. 8 - Typical VCE vs. VGE TJ = -40C
VCE (V)
10 8 6 4 2 0 5 10 VGE (V)
VCE (V)
12
ICE = 24A ICE = 48A ICE = 96A
12 10 8 6 4 2 0
ICE = 24A ICE = 48A ICE = 96A
15
20
5
10 VGE (V)
15
20
Fig. 9 - Typical VCE vs. VGE TJ = 25C
200 180 160 140 T J = 25C T J = 175C
Fig. 10 - Typical VCE vs. VGE TJ = 175C
6000 5000 4000 EOFF
ICE (A)
120 100 80 60 40 20 0 0 5 VGE (V) 10 15
Energy (J)
3000 2000 1000 0 0 25 50 IC (A) 75 100
Fig. 11 - Typ. Transfer Characteristics VCE = 50V; tp = 10s
Fig. 12 - Typ. Energy Loss vs. IC TJ = 175C; L = 200H; VCE = 400V, RG = 10; VGE = 15V
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IRGP4068DPBF/IRGP4068D-EPbF
1000
5000 4500 4000 EOFF
Swiching Time (ns)
Energy (J)
tdOFF 100
3500 3000 2500 2000 1500
tF
10 0 20 40 IC (A) 60 80 100
1000 0 25 50 75 100 125
Rg ()
Fig. 13 - Typ. Switching Time vs. IC TJ = 175C; L = 200H; VCE = 400V, RG = 10; VGE = 15V
1000 tdOFF
Swiching Time (ns)
Fig. 14 - Typ. Energy Loss vs. RG TJ = 175C; L = 200H; VCE = 400V, ICE = 48A; VGE = 15V
18 16 14 400
Tsc
350
Isc
300
Current (A)
Time (s)
12 10 8 6
250 200 150 100 50 8 10 12 14 16 18 VGE (V)
100 tF
10 0 25 50 75 100 125 RG ()
4
Fig. 15 - Typ. Switching Time vs. RG TJ = 175C; L = 200H; VCE = 400V, ICE = 48A; VGE = 15V
10000 16 Cies 14 12 10 8 6 4 2 0 0 20 40 60 80 100
Fig. 16 - VGE vs. Short Circuit VCC = 400V; TC = 25C
V CES = 300V V CES = 400V
Capacitance (pF)
1000
Coes 100 Cres 10 VCE (V)
VGE, Gate-to-Emitter Voltage (V)
0
25
50
75
100
Q G, Total Gate Charge (nC)
Fig. 17 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz
Fig. 18 - Typical Gate Charge vs. VGE ICE = 48A; L = 600H
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5
IRGP4068DPBF/IRGP4068D-EPbF
1
Thermal Response ( Z thJC ) C/W
D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006
J J 1 R1 R1 2 R2 R2 R3 R3 3 R4 R4 C 1 2 3 4 4
Ri (C/W)
0.0248 0.0652 0.1537 0.2065
i (sec)
0.000014 0.000050 0.001041 0.013663
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
Thermal Response ( Z thJC ) C/W
1
D = 0.50 0.20 0.10 0.05 0.02 0.01
0.1
J
R1 R1 J 1 2
R2 R2
R3 R3 3
R4 R4 C 4
Ri (C/W)
0.0400 0.7532 0.8317 0.3766
i (sec)
0.000030 0.000717 0.004860 0.036590
0.01
1
2
3
4
0.001
SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 1
0.0001 1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig. 20. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
6
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IRGP4068DPBF/IRGP4068D-EPbF
L
L
0
D UT 1K
VC C
80 V Rg
DU T
4 80V
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
DIODE CLAMP / DUT
L
4x
DC
360V
- 5V DUT / DRIVER
Rg
DUT
VCC
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
R=
VCC ICM
C force
400H D1 10K C sense
DUT
Rg
VCC
G force
DUT
0.0075
E sense E force
Fig.C.T.5 - Resistive Load Circuit
Fig.C.T.6 - BVCES Filter Circuit
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IRGP4068DPBF/IRGP4068D-EPbF
700 600 500 400 VCE (V) 300
90% ICE
140 120 100 80
VCE (V)
600 500 400 300 200 100 0 -100 -5.00 VCE ICE
600 500 400 300 200 100 0 -100 10.00
tf
60 40 20 0 -20 1.10
200 100 0 -100 -0.40
5% VCE 5% ICE
EOFF Loss 0.10 0.60
0.00
5.00
Time(s)
time (S)
Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175C using Fig. CT.4
Fig. WF2 - Typ. S.C. Waveform @ TJ = 25C using Fig. CT.3
8
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ICE (A)
IRGP4068DPBF/IRGP4068D-EPbF
Dimensions are shown in millimeters (inches)
TO-247AC Package Outline
TO-247AC Part Marking Information
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,5)3(
DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@
A "$C $%AAAAAAAAAAA$&
96U@A8P9@ @6SA A2A! X@@FA"$ GDI@AC
TO-247AC package is not recommended for Surface Mount Application.
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IRGP4068DPBF/IRGP4068D-EPbF
Dimensions are shown in millimeters (inches)
TO-247AD Package Outline
TO-247AD Part Marking Information
@Y6HQG@) UCDTADTA6IADSBQ"7 !F9@ XDUCA6TT@H7GA GPUA8P9@A$%$& 6TT@H7G@9APIAXXA"$A! DIAUC@A6TT@H7GAGDI@AACA Ir)AAQAAvAhriyAyvrAvv vqvphrAAGrhqArrA DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S
A"$C $%AAAAAAAAAAA$&
96U@A8P9@ @6SAA2A! X@@FA"$ GDI@AC
TO-247AD package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 08/06
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